El impacto de procesos demográficos en la formación del estudiantado en Ucrania

It has been founded that the main threats to the economic security of Ukrainian universities and the system of higher education as a whole are the lack of student body, which has been caused by negative migration and demographic processes, as well as the nonconformance of the higher education system to the needs of economy. These processes are factors that led to a decrease in the level of economic security of universities.Se ha constatado que las amenazas principales a la seguridad económica de las universidades ucranianas y al sistema de enseñanza superior en general son la falta del estudiantado. Ha sido causado por la migración negativa y procesos demográficos, así como la disconformidad entre del sistema de enseñanza superior y las necesidades de la economía. Estos procesos son factores que llevaron a una disminución en el nivel de seguridad económica de las universidades

Magnetooptical Study of Zeeman Effect in Mn modulation-doped InAs/InGaAs/InAlAs Quantum Well Structures

We report on a magneto-photoluminescence (PL) study of Mn modulation-doped InAs/InGaAs/InAlAs quantum wells. Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presence of a magnetic field applied in the Faraday geometry both lines split into two circularly polarized components. While temperature and magnetic field dependences of the splitting are well described by the Brillouin function, providing an evidence for exchange interaction with spin polarized manganese ions, the value of the splitting exceeds the expected value of the giant Zeeman splitting by two orders of magnitude for a given Mn density. Possible reasons of this striking observation are discussed

Spin orientation by electric current in (110) quantum wells

We develop a theory of spin orientation by electric current in (110)-grown semiconductor quantum wells. The controversy in the factor of two from two existed approaches is resolved by pointing out the importance of energy relaxation in this problem. The limiting cases of fast and slow energy relaxation relative to spin relaxation are considered for asymmetric (110) quantum wells. For symmetricly-doped structures the effect of spin orientation is shown to exist due to spatial fluctuations of the Rashba spin-orbit splitting. We demonstrate that the spin orientation depends strongly on the correlation length of these fluctuations as well as on the ratio of the energy and spin relaxation rates. The time-resolved kinetics of spin polarization by electric current is also governed by the correlation length being not purely exponential at slow energy relaxation. Electrical spin orientation in two-dimensional topological insulators is calculated and compared with the spin polarization induced by the magnetic field.Comment: 8 pages, 2 figure

Spin-polarized electric currents in diluted magnetic semiconductor heterostructures induced by terahertz and microwave radiation

We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by microwave or terahertz radiation. The effect is studied in (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) and (In,Ga)As/InAlAs:Mn QWs belonging to the well known II-VI and III-V DMS material systems, as well as, in heterovalent AlSb/InAs/(Zn,Mn)Te QWs which represent a promising combination of II-VI and III-V semiconductors. Experimental data and developed theory demonstrate that the photocurrent originates from a spin-dependent scattering of free carriers by static defects or phonons in the Drude absorption of radiation and subsequent relaxation of carriers. We show that in DMS structures the efficiency of the current generation is drastically enhanced compared to non-magnetic semiconductors. The enhancement is caused by the exchange interaction of carrier spins with localized spins of magnetic ions resulting, on the one hand, in the giant Zeeman spin-splitting, and, on the other hand, in the spin-dependent carrier scattering by localized Mn2+ ions polarized by an external magnetic field.Comment: 14 pages, 13 figure

Negative magneto-resistance of electron gas in a quantum well with parabolic potential

We have studied the electrical conductivity of the electron gas in parallel electric and magnetic fields directed along the plane of a parabolic quantum well (across the profile of the potential). We found a general expression for the electrical conductivity applicable for any magnitudes of the magnetic field and the degree of degeneration of the electron gas. A new mechanism of generation of the negative magnetoresistance has been revealed. It has been shown that in a parabolic quantum well with a non-degenerated electron gas the negative magnetoresistance results from spin splitting of the levels of the size quantization.Comment: 15 pages, 3 figure

Field control of anisotropic spin transport and spin helix dynamics in a modulation-doped GaAs quantum well

Electron spin transport and dynamics are investigated in a single, high-mobility, modulation-doped, GaAs quantum well using ultrafast two-color Kerr-rotation microspectroscopy, supported by qualitative kinetic theory simulations of spin diffusion and transport. Evolution of the spins is governed by the Dresselhaus bulk and Rashba structural inversion asymmetries, which manifest as an effective magnetic field that can be extracted directly from the experimental coherent spin precession. A spin-precession length λ[subscript SOI] is defined as one complete precession in the effective magnetic field. It is observed that application of (i) an out-of-plane electric field changes the spin decay time and λ[subscript SOI] through the Rashba component of the spin-orbit coupling, (ii) an in-plane magnetic field allows for extraction of the Dresselhaus and Rashba parameters, and (iii) an in-plane electric field markedly modifies both the λ[subscript SOI] and diffusion coefficient

Experimental observation of the optical spin-orbit torque

Spin polarized carriers electrically injected into a magnet from an external polarizer can exert a spin transfer torque (STT) on the magnetization. The phe- nomenon belongs to the area of spintronics research focusing on manipulating magnetic moments by electric fields and is the basis of the emerging technologies for scalable magnetoresistive random access memories. In our previous work we have reported experimental observation of the optical counterpart of STT in which a circularly polarized pump laser pulse acts as the external polarizer, allowing to study and utilize the phenomenon on several orders of magnitude shorter timescales than in the electric current induced STT. Recently it has been theoretically proposed and experimentally demonstrated that in the absence of an external polarizer, carriers in a magnet under applied electric field can develop a non-equilibrium spin polarization due to the relativistic spin-orbit coupling, resulting in a current induced spin-orbit torque (SOT) acting on the magnetization. In this paper we report the observation of the optical counterpart of SOT. At picosecond time-scales, we detect excitations of magnetization of a ferromagnetic semiconductor (Ga,Mn)As which are independent of the polarization of the pump laser pulses and are induced by non-equilibrium spin-orbit coupled photo-holes.Comment: 4 figure, supplementary information. arXiv admin note: text overlap with arXiv:1101.104